?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 hext 8050(npn) general purpose transistor replacement type : pxt8050 features ? compliment t o hext8550 maximum ratings (t a = 25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100a , i e =0 40 v collector-emitter breakdown voltage v ceo i c =0.1ma , i b =0 25 v emitter-base breakdown voltage v ebo i e =100a , i c =0 5 v collector cut-off current i cbo v cb =40v , i e =0 0.1 ua collector cut-off current i ceo v cb =20v , i e =0 0.1 ua emitter cut-off current i ebo v eb =5v , i c =0 0.1 ua dc current gain h fe(1) v ce =1v , i c =100ma 85 400 h fe(2) v ce =1v , i c =800ma 40 collector-emitter saturation voltage v ce (sat) i c =800 ma , i b =80ma 0.5 v base-emitter saturation voltage v be (sat) i c =800 ma , i b =80ma 1.2 v base-emitter voltage v be v ce =1v, i c =10ma 1 v base-emitter positive favor voltage v bef i b =1a 1.55 v output capacitance c ob v cb =10v,i e =0,f=1mhz 15 pf transition frequency f t v ce =10v , i c =50ma f=30mhz 100 mhz classification of h fe rank b c d d3 range 85-160 120-200 160-300 300-400 parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5 v collector current-continuous i c 1.5 a collector power dissipation p c 0.5 w thermal resistance from junction t o ambient r ja 250 c/w junction temperature t j 150 c storage temperature t stg -55~150 c sot-89 marking:y1 1:base 2:collector 3:emitter
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HEXT8050(npn) general purpose transistor typical characteristics 0 300 600 900 1200 1 10 100 1000 1 10 100 1000 400 600 800 1000 1200 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1 10 100 1000 1 10 100 1000 1 10 100 1000 10 100 1000 0.1 1 10 1 10 100 01234567 0.00 0.05 0.10 0.15 0.20 0.25 0.30 10 100 1 10 100 1000 comm on emitter v ce = 1v v be i c bese-em miter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 =10 i c v besat base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c t a ambient temperature t ( ) collect or power dissipation p c (w) t a =100 t a =25 =10 i c v cesat collector-emitter saturation volt age v ces at (mv) collector curremt i c (ma) 1500 1500 1500 300 i c h fe t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 1v 1500 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib c ob c ib reverse volt age v (v) capacitance c ( pf) 20 common emitter t a =25 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma collector current i c (a) collector-emitter voltage v ce (v) st atic characteristic 2 com m on emitter v ce =10v t a =25 collector current i (ma) trans ition frequency f t (mhz) i c f t
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 hext 8050(npn) general purpose transistor sot-89 package outline dimensions symbol d i m e n s i on s i n m i l l i m e t e r s d i m e n s i o n s i n i n c h e s min. max. min. max. a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 1.550ref. 0.061ref. e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e 1.500typ. 0.060typ. e1 3.000typ. 0.118typ. l 0.900 1.200 0.035 0.047
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 hext 8050(npn) general purpose transistor sot-89 tape and reel dimensionsareinmillimeter type a b c d e f p0 p p1 w sot-89 4.85 4.45 1.85 ? 1.50 1.75 5.50 4.00 8.00 2.00 12.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 sot-89 tape leader and trailer sot-89 reel dimnsionsareinmillimetere reeloption d d1 d2 g h i w1 w2 7 dia ? 180 60.00 r32.00 r86.50 r30.00 ? 13.00 13.20 16.50 tolerance 2 1 1 1 1 1 1 1 empty pockets empty pockets leader tape components
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